国产精品久久久久7777按摩,天天做天天爱天天综合网2021,曰欧一片内射VΑ在线影院,亚洲最大国产成人综合网站

Consumables >> Consumables >> GaInP/GaAs/Ge Epitaxial Wafer-30% Triple Junction
                

The  unprocessed Epitaxial Wafers of class 30% contain our high-efficiency GaInP/GaAs/Ge based epitaxial layers on a Ge substrate. These epixial wafers can be used for any further processing and customized cell designs.




Design and Mechanical Data

Substrate Material :GaInP/GaInAs/Ge on Ge substrate Base Material :100 mm ±0.20

Thickness :145 μm ±15 μm or 175 μm ±15 μm

Major Flat length :32.5 mm ±2 mm

Major Flat orientation:(100) ±2°

Average Weight :≤ 93 mg/cm2

Laser mark label:Alpha-numeric

?2008-2050 HenergySolar. All rights reserved