国产精品久久久久7777按摩,天天做天天爱天天综合网2021,曰欧一片内射VΑ在线影院,亚洲最大国产成人综合网站

Boron Dopant & Phosphorus Dopant

拉單晶摻雜劑 - 母合金

The dopant is used to change the impurities and resistivity of silicon ingot to meet the requirements. Henergysolar offers various types of boron dopant & phosphorus dopant:

Shape:
    Ingot
    Chunk
    Wafer
Doped type:
    P-type 
    N-type
Resistivity :
    0.001-0.006 ohm.CM 
    Resistivity deviation 0.001 or 0.0005 in the concentration range
Boron (atom/cm3) = 1.1732E20 ~ 1.6184E19
Phosphorus (atom/cm3) = 7.3763E19 ~ 9.6552E18
Carbon content (atom/cm3) <5E16
Oxygen content (atom/cm3) <1E18